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SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. * Specified 12.5 Volt, 30 MHz Characteristics -- Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50% MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 25 45 4.0 20 250 1.43 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C
MRF454
80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W CASE 211-11, STYLE 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 18 36 4.0 -- -- -- -- -- -- Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 40 -- 150 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob -- -- 250 pF
FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Series Equivalent Input Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Series Equivalent Output Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Parallel Equivalent Input Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Parallel Equivalent Output Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Gpe Zin Zout -- -- 12 50 -- -- -- -- -- -- .938-j.341 1.16-j.201 1.06 1817 pF 1.19 777 pF -- -- -- -- -- -- dB % Ohms Ohms -- --
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L5 + C5 L3 C6 C7 C8 12.5 Vdc -
RF OUTPUT RF INPUT C2 C1 L1 DUT C3 L2 R1 C4 L4
C1, C2, C4 -- ARCO 469 C3 -- ARCO 466 C5 -- 1000 pF, UNELCO C6, C7 -- 0.1 F Disc Ceramic C8 -- 1000 F/15 V Electrolytic R1 -- 10 Ohm/1.0 Watt, Carbon
L1 -- 3 Turns, #18 AWG, 5/16 I.D., 5/16 Long L2 -- VK200-20/4B, FERROXCUBE L3 -- 12 Turns, #18 AWG Enameled Wire, 1/4 I.D., Close Wound L4 -- 3 Turns 1/8 O.D. Copper Tubing, 3/8 I.D., 3/4 Long L5 -- 7 FERRITE Beads, FERROXCUBE #56-590-65/3B
Figure 1. 30 MHz Test Circuit Schematic
120 Pout , OUTPUT POWER (WATTS) VCC = 13.6 V 12.5 V Pout , OUTPUT POWER (WATTS) 105 90 75 60 45 30 15 0 0 f = 30 MHz 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (WATTS)
120 105 90 75 60 45 30 15 0 8 f = 30 MHz 9 10 11 12 13 14 15 16 17 18 VCC, SUPPLY VOLTAGE (VOLTS) 1.75 W Pin = 5 V 3.5 W
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
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PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4.
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54
EMITTER BASE EMITTER COLLECTOR
CASE 211-11 ISSUE N
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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